{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8519733","patent":{"patent_number":"US-8519733","title":"Method of measuring characteristics of a semiconductor element and method of manufacturing a semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-03-10T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":8,"abstract":"A measurement terminal is arranged at an edge of a semiconductor wafer to be apart from a gate electrode and a source electrode formed in a surface portion on one side in a thickness direction of a semiconductor wafer so that an electrode contact portion is in contact with a drain electrode on the other side in the thickness direction of the semiconductor wafer and that a terminal contact portion is exposed to the one side in the thickness direction of the semiconductor wafer. A probe terminal is brought into contact with the terminal contact portion of the measurement terminal and the probe terminal is brought into contact with the gate electrode and the source electrode, to thereby measure electrical characteristics of a MOSFET."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of measuring characteristics of a semiconductor element and method of manufacturing a semiconductor device","description":"A measurement terminal is arranged at an edge of a semiconductor wafer to be apart from a gate electrode and a source electrode formed in a surface portion on one side in a thickness direction of a se","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8519733","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8519733","citation_suggestion":"Patentable. \"Method of measuring characteristics of a semiconductor element and method of manufacturing a semiconductor device\" (US-8519733). https://patentable.app/patents/US-8519733","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8519733","json":"https://patentable.app/api/llm-context/US-8519733","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:47:20.612Z"}