{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8520425","patent":{"patent_number":"US-8520425","title":"Resistive random access memory with low current operation","assignee":null,"inventors":[],"filing_date":"2012-03-19T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"A memory cell in a 3-D read and write memory device has two bipolar resistance-switching layers with different respective switching currents. A low current resistance-switching layer can be switched in set and reset processes while a high current resistance-switching layer remains in a reset state and acts as a protection resistor to prevent excessively high currents on the low current resistance-switching layer. The low and high current resistance-switching layers can be of the same material such as a metal oxide, where the layers differ in terms of thickness, doping, leakiness, metal richness or other variables. Or, the low and high current resistance-switching layers can be of different materials, having one or more layers each. The high current resistance-switching layer can have a switching current which is greater than a switching current of the low current resistance-switching layer by a factor of at least 1.5 or 2.0, for instance."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Resistive random access memory with low current operation","description":"A memory cell in a 3-D read and write memory device has two bipolar resistance-switching layers with different respective switching currents. A low current resistance-switching layer can be switched i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8520425","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8520425","citation_suggestion":"Patentable. \"Resistive random access memory with low current operation\" (US-8520425). https://patentable.app/patents/US-8520425","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8520425","json":"https://patentable.app/api/llm-context/US-8520425","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:11:08.220Z"}