{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8524002","patent":{"patent_number":"US-8524002","title":"Silicon wafer and method for producing the same","assignee":null,"inventors":[],"filing_date":"2010-12-20T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":3,"abstract":"Silicon wafers doped with nitrogen, hydrogen and carbon, have a plurality of voids, wherein 50% or more of the total number of voids are bubble-like shaped aggregates of voids;"},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon wafer and method for producing the same","description":"Silicon wafers doped with nitrogen, hydrogen and carbon, have a plurality of voids, wherein 50% or more of the total number of voids are bubble-like shaped aggregates of voids;","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8524002","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8524002","citation_suggestion":"Patentable. \"Silicon wafer and method for producing the same\" (US-8524002). https://patentable.app/patents/US-8524002","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8524002","json":"https://patentable.app/api/llm-context/US-8524002","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:57:08.345Z"}