{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8524527","patent":{"patent_number":"US-8524527","title":"High-performance single-crystalline N-type dopant-doped metal oxide nanowires for transparent thin film transistors and active matrix organic light-emitting diode displays","assignee":null,"inventors":[],"filing_date":"2010-09-27T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["H01L","B82Y","B82Y","H01L","H01L"],"num_claims":3,"abstract":"Methods, materials, apparatus and systems are described for implementing high-performance arsenic (As)-doped indium oxide (In2O3) nanowires for transparent electronics, including their implementation in transparent thin-film transistors (TTFTs) and transparent active-matrix organic light-emitting diodes (AMOLED) displays. In one implementation, a method of fabricating n-type dopant-doped metal oxide nanowires includes dispersing nanoparticle catalysts on a Si/SiO2 substrate. n-type dopant-doped metal oxide nanowires are grown on the Si/SiO2 substrate using a laser ablation process. The laser ablation process can include: placing n-type dopant at an upper stream of a furnace; placing the Si/SiO2 substrate at a down stream end of the furnace; heating the furnace; adding hydrogen to a carrier gas comprising argon and oxygen; flowing the hydrogen added carrier gas over the Si/SiO2 substrate to suppress oxidation processes and incorporate the n-type dopant into the metal oxide nanowires; and cooling the n-type dopant-doped metal oxide nanowires grown on the Si/SiO2 substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High-performance single-crystalline N-type dopant-doped metal oxide nanowires for transparent thin film transistors and active matrix organic light-emitting diode displays","description":"Methods, materials, apparatus and systems are described for implementing high-performance arsenic (As)-doped indium oxide (In2O3) nanowires for transparent electronics, including their implementation ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8524527","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8524527","citation_suggestion":"Patentable. \"High-performance single-crystalline N-type dopant-doped metal oxide nanowires for transparent thin film transistors and active matrix organic light-emitting diode displays\" (US-8524527). https://patentable.app/patents/US-8524527","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8524527","json":"https://patentable.app/api/llm-context/US-8524527","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:13:54.228Z"}