{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8524548","patent":{"patent_number":"US-8524548","title":"DMOS Transistor with a cavity that lies below the drift region","assignee":null,"inventors":[],"filing_date":"2011-04-26T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":6,"abstract":"A lateral DMOS transistor formed on a silicon-on-insulator (SOI) structure has a higher breakdown voltage that results from a cavity that is formed in the bulk region of the SOI structure. The cavity exposes a portion of the bottom surface of the insulator layer of the SOI structure that lies directly vertically below the drift region of the DMOS transistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"DMOS Transistor with a cavity that lies below the drift region","description":"A lateral DMOS transistor formed on a silicon-on-insulator (SOI) structure has a higher breakdown voltage that results from a cavity that is formed in the bulk region of the SOI structure. The cavity ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8524548","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8524548","citation_suggestion":"Patentable. \"DMOS Transistor with a cavity that lies below the drift region\" (US-8524548). https://patentable.app/patents/US-8524548","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8524548","json":"https://patentable.app/api/llm-context/US-8524548","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:42:40.436Z"}