{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8524570","patent":{"patent_number":"US-8524570","title":"Method and apparatus for improving gate contact","assignee":null,"inventors":[],"filing_date":"2010-09-27T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":13,"abstract":"A method of fabricating a semiconductor device includes providing a substrate having a first surface, forming an isolation structure disposed partly in the substrate and having an second surface higher than the first surface by a step height, removing a portion of the isolation structure to form a recess therein having a bottom surface disposed below the first surface, and forming a contact engaging the gate structure over the recess. A different aspect involves an apparatus that includes a substrate having a first surface, an isolation structure disposed partly in the substrate and having a second surface higher than the first surface by a step height, a recess extending downwardly from the second surface, the recess having a bottom surface disposed below the first surface, a gate structure, and a contact engaging the gate structure over the recess."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method and apparatus for improving gate contact","description":"A method of fabricating a semiconductor device includes providing a substrate having a first surface, forming an isolation structure disposed partly in the substrate and having an second surface highe","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8524570","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8524570","citation_suggestion":"Patentable. \"Method and apparatus for improving gate contact\" (US-8524570). https://patentable.app/patents/US-8524570","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8524570","json":"https://patentable.app/api/llm-context/US-8524570","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:18:44.716Z"}