{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8524575","patent":{"patent_number":"US-8524575","title":"Group III nitride crystal and method for producing the same","assignee":null,"inventors":[],"filing_date":"2011-12-28T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substrates 10p and 10q having a main plane from a group III nitride bulk crystal 1, the main planes 10pm and 10qm having a plane orientation with an off-angle of five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates 10p and 10q adjacent to each other such that the main planes 10pm and 10qm of the substrates 10p and 10q are parallel to each other and each [0001] direction of the substrates 10p and 10q coincides with each other, and growing a group III nitride crystal 20 on the main planes 10pm and 10qm of the substrates 10p and 10q. "},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Group III nitride crystal and method for producing the same","description":"A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substrates 10p and 10q having a main plane from a gro","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8524575","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8524575","citation_suggestion":"Patentable. \"Group III nitride crystal and method for producing the same\" (US-8524575). https://patentable.app/patents/US-8524575","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8524575","json":"https://patentable.app/api/llm-context/US-8524575","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:16:24.842Z"}