{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8524588","patent":{"patent_number":"US-8524588","title":"Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process","assignee":null,"inventors":[],"filing_date":"2009-06-26T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":17,"abstract":"The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a gate dielectric over a semiconductor substrate, forming a capping layer over or under the gate dielectric, forming a metal layer over the capping layer, the metal layer having a first work function, treating a portion of the metal layer such that a work function of the portion of the metal layer changes from the first work function to a second work function, and forming a first metal gate from the untreated portion of the metal layer having the first work function and forming a second metal gate from the treated portion of the metal layer having the second work function."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process","description":"The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a gate dielectric over a semiconductor substrate, forming a capping layer over or under the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8524588","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8524588","citation_suggestion":"Patentable. \"Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process\" (US-8524588). https://patentable.app/patents/US-8524588","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8524588","json":"https://patentable.app/api/llm-context/US-8524588","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:30:29.200Z"}