{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8524591","patent":{"patent_number":"US-8524591","title":"Maintaining integrity of a high-K gate stack by passivation using an oxygen plasma","assignee":null,"inventors":[],"filing_date":"2010-08-02T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":22,"abstract":"In semiconductor devices, integrity of a titanium nitride material may be increased by exposing the material to an oxygen plasma after forming a thin silicon nitride-based material. The oxygen plasma may result in an additional passivation of any minute surface portions which may not be appropriately covered by the silicon nitride-based material. Consequently, efficient cleaning recipes, such as cleaning processes based on SPM, may be performed after the additional passivation without undue material loss of the titanium nitride material. In this manner, sophisticated high-k metal gate stacks may be formed with a very thin protective liner material on the basis of efficient cleaning processes without unduly contributing to a pronounced yield loss in an early manufacturing stage."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Maintaining integrity of a high-K gate stack by passivation using an oxygen plasma","description":"In semiconductor devices, integrity of a titanium nitride material may be increased by exposing the material to an oxygen plasma after forming a thin silicon nitride-based material. The oxygen plasma ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8524591","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8524591","citation_suggestion":"Patentable. \"Maintaining integrity of a high-K gate stack by passivation using an oxygen plasma\" (US-8524591). https://patentable.app/patents/US-8524591","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8524591","json":"https://patentable.app/api/llm-context/US-8524591","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:47:59.525Z"}