{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8524601","patent":{"patent_number":"US-8524601","title":"Method of manufacturing semiconductor device using Resolution Enhanced Lithography Assisted Chemical Shrinkage (RELACS)","assignee":null,"inventors":[],"filing_date":"2011-12-22T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":8,"abstract":"A method of manufacturing a semiconductor device includes forming an insulating film on a surface of a semiconductor layer, forming a resist on a surface of the insulating film, the resist having an opening, forming a hardened layer on an inner circumference of the resist by attaching a pattern shrinking agent to the resist, the pattern shrinking agent undergoing a cross-linking reaction with the resist, etching the insulating film using the resist and the hardened layer as masks, removing the hardened layer, and forming a metal layer on a surface of the semiconductor layer, on a surface of the insulating film, and on a surface of the resist. The method further includes removing the resist and the portion of the metal layer on the surface of the resist by lift-off."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device using Resolution Enhanced Lithography Assisted Chemical Shrinkage (RELACS)","description":"A method of manufacturing a semiconductor device includes forming an insulating film on a surface of a semiconductor layer, forming a resist on a surface of the insulating film, the resist having an o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8524601","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8524601","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device using Resolution Enhanced Lithography Assisted Chemical Shrinkage (RELACS)\" (US-8524601). https://patentable.app/patents/US-8524601","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8524601","json":"https://patentable.app/api/llm-context/US-8524601","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:06:57.465Z"}