{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8524603","patent":{"patent_number":"US-8524603","title":"Fabricating method for semiconductor device","assignee":null,"inventors":[],"filing_date":"2012-05-16T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":14,"abstract":"A fabricating method of a semiconductor device is provided. First, a substrate having a first surface and a second surface opposite to each other is provided. A shallow trench is formed on the first surface, and a first nitride layer is formed on the second surface. A dielectric layer is formed on the first surface of the substrate to cover the shallow trench. Then, the first nitride layer is removed, and a first protective layer is formed on the second surface of the substrate. After that, a planarization process is performed to remove a portion of the dielectric layer outside the shallow trench. The fabricating method is capable of improving the fabricating yield of semiconductor device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fabricating method for semiconductor device","description":"A fabricating method of a semiconductor device is provided. First, a substrate having a first surface and a second surface opposite to each other is provided. A shallow trench is formed on the first s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8524603","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8524603","citation_suggestion":"Patentable. \"Fabricating method for semiconductor device\" (US-8524603). https://patentable.app/patents/US-8524603","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8524603","json":"https://patentable.app/api/llm-context/US-8524603","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:31:33.101Z"}