{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8524608","patent":{"patent_number":"US-8524608","title":"Method for fabricating a patterned structure of a semiconductor device","assignee":null,"inventors":[],"filing_date":"2012-04-26T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"The present invention provides a method for fabricating a patterned structure in a semiconductor device, which includes the following processes. First, a target layer, a first mask and a first patterned mask are sequentially formed on a substrate. Then, a first etching process is performed to form a plurality of characteristic structures on the substrate, wherein each of the characteristic structures comprises a patterned first mask and a patterned target layer. A second patterned mask is formed on the substrate, wherein the second patterned mask covers a portion of the characteristic structures and exposes a predetermined region. A second etching process is performed to fully eliminate the characteristic structures within the predetermined region. Finally, a third etching process is performed to fully eliminate the target layer not covered by the patterned first mask."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating a patterned structure of a semiconductor device","description":"The present invention provides a method for fabricating a patterned structure in a semiconductor device, which includes the following processes. First, a target layer, a first mask and a first pattern","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8524608","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8524608","citation_suggestion":"Patentable. \"Method for fabricating a patterned structure of a semiconductor device\" (US-8524608). https://patentable.app/patents/US-8524608","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8524608","json":"https://patentable.app/api/llm-context/US-8524608","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:05:18.852Z"}