{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8524615","patent":{"patent_number":"US-8524615","title":"Method of forming hardened porous dielectric layer and method of fabricating semiconductor device having hardened porous dielectric layer","assignee":null,"inventors":[],"filing_date":"2011-09-21T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Example embodiments relate to a method of forming a hardened porous dielectric layer. The method may include forming a dielectric layer containing porogens on a substrate, transforming the dielectric layer into a porous dielectric layer using a first UV curing process to remove the porogens from the dielectric layer, and transforming the porous dielectric layer into a crosslinked porous dielectric layer using a second UV curing process to generate crosslinks in the porous dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming hardened porous dielectric layer and method of fabricating semiconductor device having hardened porous dielectric layer","description":"Example embodiments relate to a method of forming a hardened porous dielectric layer. The method may include forming a dielectric layer containing porogens on a substrate, transforming the dielectric ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8524615","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8524615","citation_suggestion":"Patentable. \"Method of forming hardened porous dielectric layer and method of fabricating semiconductor device having hardened porous dielectric layer\" (US-8524615). https://patentable.app/patents/US-8524615","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8524615","json":"https://patentable.app/api/llm-context/US-8524615","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:15:15.553Z"}