{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8524616","patent":{"patent_number":"US-8524616","title":"Method of nonstoichiometric CVD dielectric film surface passivation for film roughness control","assignee":null,"inventors":[],"filing_date":"2009-10-12T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":15,"abstract":"A method is provided for reducing film surface roughness in Chemical Vapor Deposition (CVD) of dielectric films. The method may include removing dangling bonds from a film surface of a CVD dielectric film by a reactant. For reducing a surface roughness of a dielectric film, a further method may passivate a nonstoichiometric film surface of the dielectric film, or of a previous dielectric film, or of the dielectric film and of a previous dielectric film, by a reactant gas in the vapor environment. The dielectric film may include at least one out of the following group: ultraviolet light transparent Silicon Nitride (UVSIN), Silicon Rich Oxide (SRO), Silicon Dioxide (SiO2), Silicon Nitride (Si3N4), Phosphosilicate Glass (PSG), or Silicon Oxynitride (SiON) The reactant gas may include at least one out of the following group: Ammonia (NH3), Hydrogen (H2), Nitrous Oxide (N2O), or Oxygen (O2)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of nonstoichiometric CVD dielectric film surface passivation for film roughness control","description":"A method is provided for reducing film surface roughness in Chemical Vapor Deposition (CVD) of dielectric films. The method may include removing dangling bonds from a film surface of a CVD dielectric ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8524616","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8524616","citation_suggestion":"Patentable. \"Method of nonstoichiometric CVD dielectric film surface passivation for film roughness control\" (US-8524616). https://patentable.app/patents/US-8524616","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8524616","json":"https://patentable.app/api/llm-context/US-8524616","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:17:58.730Z"}