{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8524617","patent":{"patent_number":"US-8524617","title":"Methods for manufacturing dielectric films","assignee":null,"inventors":[],"filing_date":"2010-02-26T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A method for manufacturing a dielectric film having a high dielectric constant is provided.The method is a method for forming, on a substrate, a dielectric film including a metal oxide containing O and elements A and B, wherein the element A comprises Hf or a mixture of Hf and Zr and the element B comprises Al or Si, which includes the steps of: forming a metal oxide having an amorphous structure which has a molar ratio between element A and element B, B/(A+B) of 0.02≦(B/(A+B))≦0.095 and a molar ratio between element A and O, O/A of 1.0<(O/A)<2.0; and annealing the metal oxide having the amorphous structure at 700° C. or more to form a metal oxide containing a crystal phase with a cubic crystal content of 80% or more."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods for manufacturing dielectric films","description":"A method for manufacturing a dielectric film having a high dielectric constant is provided.The method is a method for forming, on a substrate, a dielectric film including a metal oxide containing O an","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8524617","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8524617","citation_suggestion":"Patentable. \"Methods for manufacturing dielectric films\" (US-8524617). https://patentable.app/patents/US-8524617","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8524617","json":"https://patentable.app/api/llm-context/US-8524617","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:46:50.953Z"}