{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8525228","patent":{"patent_number":"US-8525228","title":"Semiconductor on insulator (XOI) for high performance field effect transistors","assignee":null,"inventors":[],"filing_date":"2011-07-01T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":26,"abstract":"Semiconductor-on-insulator (XOI) structures and methods of fabricating XOI structures are provided. Single-crystalline semiconductor is grown on a source substrate, patterned, and transferred onto a target substrate, such as a Si/SiO2 substrate, thereby assembling an XOI substrate. The transfer process can be conducted through a stamping method or a bonding method. Multiple transfers can be carried out to form heterogenous compound semiconductor devices. The single-crystalline semiconductor can be II-IV or III-V compound semiconductor, such as InAs. A thermal oxide layer can be grown on the patterned single crystalline semiconductor, providing improved electrical characteristics and interface properties. In addition, strain tuning is accomplished via a capping layer formed on the single-crystalline semiconductor before transferring the single-crystalline semiconductor to the target substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor on insulator (XOI) for high performance field effect transistors","description":"Semiconductor-on-insulator (XOI) structures and methods of fabricating XOI structures are provided. Single-crystalline semiconductor is grown on a source substrate, patterned, and transferred onto a t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8525228","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8525228","citation_suggestion":"Patentable. \"Semiconductor on insulator (XOI) for high performance field effect transistors\" (US-8525228). https://patentable.app/patents/US-8525228","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8525228","json":"https://patentable.app/api/llm-context/US-8525228","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T20:32:40.501Z"}