{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8525250","patent":{"patent_number":"US-8525250","title":"SONOS memory device with reduced short-channel effects","assignee":null,"inventors":[],"filing_date":"2006-12-18T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["B82Y","G11C"],"num_claims":27,"abstract":"According to certain embodiments, a non-volatile memory device on a semiconductor substrate having a semiconductor surface layer comprises a channel region that extends in a first direction between the source and drain regions. The gate is disposed near the channel region and the memory element is disposed in between the channel region and the gate. The channel region is disposed within a beam-shaped semiconductor layer, with the beam-shaped semiconductor layer extending in the first direction between the source and drain regions and having lateral surfaces extending parallel to the first direction. The memory element comprises a charge-trapping stack so as to embed therein the beam-shaped semiconductor layer in a U-shaped form."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"SONOS memory device with reduced short-channel effects","description":"According to certain embodiments, a non-volatile memory device on a semiconductor substrate having a semiconductor surface layer comprises a channel region that extends in a first direction between th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8525250","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8525250","citation_suggestion":"Patentable. \"SONOS memory device with reduced short-channel effects\" (US-8525250). https://patentable.app/patents/US-8525250","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8525250","json":"https://patentable.app/api/llm-context/US-8525250","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:44:35.424Z"}