{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8525271","patent":{"patent_number":"US-8525271","title":"Semiconductor structure with improved channel stack and method for fabrication thereof","assignee":null,"inventors":[],"filing_date":"2011-03-03T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":8,"abstract":"A method for fabricating a semiconductor structure with a channel stack includes forming a screening layer under a gate of a PMOS transistor element and a NMOS transistor element, forming a threshold voltage control layer on the screening layer, and forming an epitaxial channel layer on the threshold control layer. At least a portion of the epitaxial channel layers for the PMOS transistor element and the NMOS transistor element are formed as a common blanket layer. The screening layer for the PMOS transistor element may include antimony as a dopant material that may be inserted into the structure prior to or after formation of the epitaxial channel layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure with improved channel stack and method for fabrication thereof","description":"A method for fabricating a semiconductor structure with a channel stack includes forming a screening layer under a gate of a PMOS transistor element and a NMOS transistor element, forming a threshold ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8525271","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8525271","citation_suggestion":"Patentable. \"Semiconductor structure with improved channel stack and method for fabrication thereof\" (US-8525271). https://patentable.app/patents/US-8525271","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8525271","json":"https://patentable.app/api/llm-context/US-8525271","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:34:01.193Z"}