{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8525274","patent":{"patent_number":"US-8525274","title":"Semiconductor device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2011-03-17T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":10,"abstract":"A semiconductor device includes a substrate, a semiconductor, a first surface passivation film including nitride, a second passivation film, a gate electrode, and a source electrode and a drain electrode. The semiconductor layer is provided on the substrate. The first surface passivation film including nitride is provided on the semiconductor layer and has at least two openings. The second surface passivation film covers an upper surface and a side surface of the first surface passivation film. The gate electrode is provided on a part of the second surface passivation film. The source electrode and the drain electrode are respectively provided on the two openings. In addition, the second surface passivation film includes a material of which melting point is higher than the melting points of the gate electrode, the source electrode, and the drain electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing the same","description":"A semiconductor device includes a substrate, a semiconductor, a first surface passivation film including nitride, a second passivation film, a gate electrode, and a source electrode and a drain electr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8525274","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8525274","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing the same\" (US-8525274). https://patentable.app/patents/US-8525274","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8525274","json":"https://patentable.app/api/llm-context/US-8525274","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:12:37.812Z"}