{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8525275","patent":{"patent_number":"US-8525275","title":"Methods of forming non-volatile memory devices","assignee":null,"inventors":[],"filing_date":"2010-11-01T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":3,"abstract":"A non-volatile memory device includes a dielectric layer between a charge storage layer and a substrate. Free bonds of the dielectric layer can be reduced to reduce/prevent charges from leaking through the free bonds and/or from being trapped by the free bonds. As a result, data retention properties and/or durability of a non-volatile memory device may be enhanced."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming non-volatile memory devices","description":"A non-volatile memory device includes a dielectric layer between a charge storage layer and a substrate. Free bonds of the dielectric layer can be reduced to reduce/prevent charges from leaking throug","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8525275","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8525275","citation_suggestion":"Patentable. \"Methods of forming non-volatile memory devices\" (US-8525275). https://patentable.app/patents/US-8525275","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8525275","json":"https://patentable.app/api/llm-context/US-8525275","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:20:19.630Z"}