{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8525280","patent":{"patent_number":"US-8525280","title":"Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy","assignee":null,"inventors":[],"filing_date":"2011-07-26T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["B82Y","B82Y","G11C"],"num_claims":5,"abstract":"An MRAM array of MTJ memory cells is provided wherein each such cell is a layered MTJ structure located at an intersection of a word and bit line and has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The array of MTJ memory cells so provided is far less sensitive to shape irregularities and edge defects of individual cells than arrays of the prior art."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy","description":"An MRAM array of MTJ memory cells is provided wherein each such cell is a layered MTJ structure located at an intersection of a word and bit line and has a small circular horizontal cross-section of 1","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8525280","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8525280","citation_suggestion":"Patentable. \"Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy\" (US-8525280). https://patentable.app/patents/US-8525280","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8525280","json":"https://patentable.app/api/llm-context/US-8525280","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:46:14.248Z"}