{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8525339","patent":{"patent_number":"US-8525339","title":"Hybrid copper interconnect structure and method of fabricating same","assignee":null,"inventors":[],"filing_date":"2011-07-27T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A hybrid interconnect structure containing copper regions that have different impurities levels within a same opening is provided. In one embodiment, the interconnect structure includes a patterned dielectric material having at least one opening located therein. A dual material liner is located at least on sidewalls of the patterned dielectric material within the at least one opening. The structure further includes a first copper region having a first impurity level located within a bottom region of the at least one opening and a second copper region having a second impurity level located within a top region of the at least one opening and atop the first copper region. In accordance with the present disclosure, the first impurity level of the first copper region is different from the second impurity level of the second copper region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Hybrid copper interconnect structure and method of fabricating same","description":"A hybrid interconnect structure containing copper regions that have different impurities levels within a same opening is provided. In one embodiment, the interconnect structure includes a patterned di","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8525339","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8525339","citation_suggestion":"Patentable. \"Hybrid copper interconnect structure and method of fabricating same\" (US-8525339). https://patentable.app/patents/US-8525339","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8525339","json":"https://patentable.app/api/llm-context/US-8525339","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:47:07.626Z"}