{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8525343","patent":{"patent_number":"US-8525343","title":"Device with through-silicon via (TSV) and method of forming the same","assignee":null,"inventors":[],"filing_date":"2010-09-28T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":21,"abstract":"A device with through-silicon via (TSV) and a method of forming the same includes the formation of an opening in a silicon substrate, the formation of a first insulation layer on the sidewalls and bottom of the opening, the formation of a second insulation layer on the sidewalls and bottom of the opening. A first interface between the first insulation layer and the silicon substrate has an interface roughness with a peak-to-valley height less than 5 nm. A second interface between the second insulation layer and the conductive layer has an interface roughness with a peak-to-valley height less than 5 nm."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Device with through-silicon via (TSV) and method of forming the same","description":"A device with through-silicon via (TSV) and a method of forming the same includes the formation of an opening in a silicon substrate, the formation of a first insulation layer on the sidewalls and bot","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8525343","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8525343","citation_suggestion":"Patentable. \"Device with through-silicon via (TSV) and method of forming the same\" (US-8525343). https://patentable.app/patents/US-8525343","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8525343","json":"https://patentable.app/api/llm-context/US-8525343","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:56:15.893Z"}