{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8526232","patent":{"patent_number":"US-8526232","title":"Nonvolatile memory device using variable resistive element","assignee":null,"inventors":[],"filing_date":"2011-04-12T00:00:00.000Z","publication_date":"2013-09-03T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A nonvolatile memory device that employs a variable resistive element includes: a memory cell array having a plurality of memory cells; a first circuit block that is disposed at one side of the memory cell array and performs a first operation on the memory cells; a second circuit block that is disposed at the other side of the memory cell array and performs a second operation on the memory cells, wherein the second operation is different from the first operation; and a redundancy block that is disposed closer to the second circuit block than the first circuit block, and which compares a repair address of a repaired memory cell among the plurality of memory cells with an input address to then generate a redundancy control signal, and to supply the redundancy control signal to the first circuit block and the second circuit block."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile memory device using variable resistive element","description":"A nonvolatile memory device that employs a variable resistive element includes: a memory cell array having a plurality of memory cells; a first circuit block that is disposed at one side of the memory","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8526232","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8526232","citation_suggestion":"Patentable. \"Nonvolatile memory device using variable resistive element\" (US-8526232). https://patentable.app/patents/US-8526232","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8526232","json":"https://patentable.app/api/llm-context/US-8526232","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:55:46.663Z"}