{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8530256","patent":{"patent_number":"US-8530256","title":"Production process for semiconductor device","assignee":null,"inventors":[],"filing_date":"2012-03-09T00:00:00.000Z","publication_date":"2013-09-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":4,"abstract":"(a) Forming on a growth substrate a void-containing layer that is made of a group III nitride compound semiconductor and contains voids. (b) Forming on the void-containing layer an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids. (c) Forming on the n-type layer an active layer made of a group III nitride compound semiconductor. (d) Forming on the active layer a p-type layer made of a p-type group III nitride compound semiconductor. (e) Bonding a support substrate above the p-type layer. (f) Peeling off the growth substrate at the boundary where the void are produced. (g) Planarizing the n-type layer. Step (b) comprises (b1) forming part of the n-type layer under conditions where horizontal growth is relatively weak and (b2) forming the remaining part of the n-type layer under conditions where horizontal growth is relatively strong."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Production process for semiconductor device","description":"(a) Forming on a growth substrate a void-containing layer that is made of a group III nitride compound semiconductor and contains voids. (b) Forming on the void-containing layer an n-type layer that i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8530256","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8530256","citation_suggestion":"Patentable. \"Production process for semiconductor device\" (US-8530256). https://patentable.app/patents/US-8530256","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8530256","json":"https://patentable.app/api/llm-context/US-8530256","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T10:02:20.068Z"}