{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8530274","patent":{"patent_number":"US-8530274","title":"Semiconductor device and method of forming air gap adjacent to stress sensitive region of the die","assignee":null,"inventors":[],"filing_date":"2012-12-06T00:00:00.000Z","publication_date":"2013-09-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":32,"abstract":"A semiconductor device is made by mounting an insulating layer over a temporary substrate. A via is formed through the insulating layer. The via is filled with conductive material. A semiconductor die has a stress sensitive region. A dam is formed around the stress sensitive region. The semiconductor die is mounted to the conductive via. The dam creates a gap adjacent to the stress sensitive region. An encapsulant is deposited over the semiconductor die. The dam blocks the encapsulant from entering the gap. The temporary substrate is removed. A first interconnect structure is formed over the semiconductor die. The gap isolates the stress sensitive region from the first interconnect structure. A shielding layer or heat sink can be formed over the semiconductor die. A second interconnect structure can be formed over the semiconductor die opposite the first interconnect structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of forming air gap adjacent to stress sensitive region of the die","description":"A semiconductor device is made by mounting an insulating layer over a temporary substrate. A via is formed through the insulating layer. The via is filled with conductive material. A semiconductor die","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8530274","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8530274","citation_suggestion":"Patentable. \"Semiconductor device and method of forming air gap adjacent to stress sensitive region of the die\" (US-8530274). https://patentable.app/patents/US-8530274","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8530274","json":"https://patentable.app/api/llm-context/US-8530274","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:55:06.537Z"}