{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8530283","patent":{"patent_number":"US-8530283","title":"Process for forming an electronic device including a nonvolatile memory structure having an antifuse component","assignee":null,"inventors":[],"filing_date":"2011-09-14T00:00:00.000Z","publication_date":"2013-09-10T00:00:00.000Z","cpc_codes":["H01L","G11C","G11C","G11C","H01L","H01L"],"num_claims":20,"abstract":"An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include an access transistor, a read transistor, and an antifuse component coupled to the access transistor and the read transistor. In an embodiment, the read transistor can include a gate electrode, and the antifuse component can include a first electrode and a second electrode overlying the first electrode. The gate electrode and the first electrode can be parts of the same gate member. In another embodiment, the access transistor can include a gate electrode, and the antifuse component can include a first electrode, an antifuse dielectric layer, and a second electrode. The electronic device can further include a conductive member overlying the antifuse dielectric layer and the gate electrode of the access transistor, wherein the conductive member is configured to electrically float. Processes for making the same are also disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Process for forming an electronic device including a nonvolatile memory structure having an antifuse component","description":"An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include an access transistor, a read transistor, and an antifuse component coupled to the access tra","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8530283","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8530283","citation_suggestion":"Patentable. \"Process for forming an electronic device including a nonvolatile memory structure having an antifuse component\" (US-8530283). https://patentable.app/patents/US-8530283","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8530283","json":"https://patentable.app/api/llm-context/US-8530283","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:05:26.309Z"}