{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8530318","patent":{"patent_number":"US-8530318","title":"Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same","assignee":null,"inventors":[],"filing_date":"2009-03-25T00:00:00.000Z","publication_date":"2013-09-10T00:00:00.000Z","cpc_codes":["B82Y","G11C"],"num_claims":15,"abstract":"In some aspects, a method of fabricating a memory cell is provided that includes: (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube (“CNT”) material above the first conductor by: (a) fabricating a CNT seeding layer on the first conductor, wherein the CNT seeding layer comprises silicon-germanium (“Si/Ge”), (b) planarizing a surface of the deposited CNT seeding layer, and (c) selectively fabricating CNT material on the CNT seeding layer; (3) fabricating a diode above the CNT material; and (4) fabricating a second conductor above the diode. Numerous other aspects are provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same","description":"In some aspects, a method of fabricating a memory cell is provided that includes: (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube (“CNT”) material a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8530318","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8530318","citation_suggestion":"Patentable. \"Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same\" (US-8530318). https://patentable.app/patents/US-8530318","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8530318","json":"https://patentable.app/api/llm-context/US-8530318","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:05:35.217Z"}