{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8530320","patent":{"patent_number":"US-8530320","title":"High-nitrogen content metal resistor and method of forming same","assignee":null,"inventors":[],"filing_date":"2011-06-08T00:00:00.000Z","publication_date":"2013-09-10T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":14,"abstract":"A thin film metal resistor is provided that includes an in-situ formed metal nitride layer that is formed in a lower region of a deposited metal nitride layer. The in-situ formed metal nitride layer, together with the overlying deposited metal nitride layer, from a thin film metal resistor which has a nitrogen content that is greater than 60 atomic % nitrogen. The in-situ formed metal nitride layer is present on a nitrogen enriched dielectric surface layer. In accordance with the present disclosure, the in-situ formed metal nitride layer is formed during and/or after formation of the deposited metal nitride layer by reacting metal atoms from the deposited metal nitride layer with nitrogen atoms present in the nitrogen enriched dielectric surface layer. The presence of the in-situ formed metal nitride layer in the lower region of the metal nitride layer provides a two-component metal resistor having greater than 60 atomic % nitrogen therein."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High-nitrogen content metal resistor and method of forming same","description":"A thin film metal resistor is provided that includes an in-situ formed metal nitride layer that is formed in a lower region of a deposited metal nitride layer. The in-situ formed metal nitride layer, ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8530320","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8530320","citation_suggestion":"Patentable. \"High-nitrogen content metal resistor and method of forming same\" (US-8530320). https://patentable.app/patents/US-8530320","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8530320","json":"https://patentable.app/api/llm-context/US-8530320","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:02:17.586Z"}