{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8530326","patent":{"patent_number":"US-8530326","title":"Method of fabricating a dummy gate structure in a gate last process","assignee":null,"inventors":[],"filing_date":"2012-06-29T00:00:00.000Z","publication_date":"2013-09-10T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":17,"abstract":"A method of semiconductor device fabrication including forming a plurality of gate structures in a first portion of a substrate, wherein the plurality of gate structures have a first height. A first metal gate structure is formed in a second portion of the substrate, the first metal gate structure being surrounded by an isolation region. A plurality of dummy gate structures is formed in the second portion of the substrate. The plurality of dummy gate structures are configured in a ring formation encircling the metal gate structure and the isolation region. The plurality of dummy structures have a top surface that is substantially planar with the plurality of gate structures and covers at least 5% of a pattern density of the second portion of the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of fabricating a dummy gate structure in a gate last process","description":"A method of semiconductor device fabrication including forming a plurality of gate structures in a first portion of a substrate, wherein the plurality of gate structures have a first height. A first m","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8530326","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8530326","citation_suggestion":"Patentable. \"Method of fabricating a dummy gate structure in a gate last process\" (US-8530326). https://patentable.app/patents/US-8530326","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8530326","json":"https://patentable.app/api/llm-context/US-8530326","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:46:30.575Z"}