{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8530327","patent":{"patent_number":"US-8530327","title":"Nitride shallow trench isolation (STI) structures and methods for forming the same","assignee":null,"inventors":[],"filing_date":"2011-08-31T00:00:00.000Z","publication_date":"2013-09-10T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":12,"abstract":"A shallow trench isolation (STI) structure and methods for forming the same provide an STI structure with a top surface formed completely of silicon nitride. The methods for forming the STI structures provide for at least one nitride deposition step followed by a further nitride deposition step to re-fill divots that occur along the upper portions of the trench sidewalls."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nitride shallow trench isolation (STI) structures and methods for forming the same","description":"A shallow trench isolation (STI) structure and methods for forming the same provide an STI structure with a top surface formed completely of silicon nitride. The methods for forming the STI structures","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8530327","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8530327","citation_suggestion":"Patentable. \"Nitride shallow trench isolation (STI) structures and methods for forming the same\" (US-8530327). https://patentable.app/patents/US-8530327","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8530327","json":"https://patentable.app/api/llm-context/US-8530327","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T20:33:44.956Z"}