{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8530328","patent":{"patent_number":"US-8530328","title":"Method for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2012-05-26T00:00:00.000Z","publication_date":"2013-09-10T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":6,"abstract":"The present invention discloses a method for manufacturing a semiconductor device, comprising: forming a first shallow trench isolation in a substrate; forming a semiconductor device structure in an active region surrounded by the first shallow trench isolation; removing the first shallow trench isolation and leaving a shallow trench in the substrate; and filling the shallow trench with an insulating material to form a second shallow trench isolation. In the method for manufacturing the semiconductor device according to the present invention, after forming the shallow trench isolation with high stress, the high stress is memorized by the gate to enhance the stress in the channel region by etching, removing, and then backfilling the shallow trench isolation, so that the carrier mobility in the channel regions to be formed later can be increased and the device performance can be improved."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor device","description":"The present invention discloses a method for manufacturing a semiconductor device, comprising: forming a first shallow trench isolation in a substrate; forming a semiconductor device structure in an a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8530328","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8530328","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device\" (US-8530328). https://patentable.app/patents/US-8530328","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8530328","json":"https://patentable.app/api/llm-context/US-8530328","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:15:36.912Z"}