{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8530949","patent":{"patent_number":"US-8530949","title":"Semiconductor device with common contact coupling gate wiring integrated with gate electrode of antifuse to diffusion layer","assignee":null,"inventors":[],"filing_date":"2011-09-30T00:00:00.000Z","publication_date":"2013-09-10T00:00:00.000Z","cpc_codes":["G11C","H01L","H01L"],"num_claims":10,"abstract":"An antifuse whose internal written information cannot be analyzed even by utilizing methods to determine whether there is a charge-up in the electrodes. The antifuse includes a gate insulation film, a gate electrode, and a first diffusion layer. A second diffusion layer is isolated from the first diffusion layer by way of a device isolator film, and is the same conduction type as the first diffusion layer. The gate wiring is formed as one integrated piece with the gate electrode, and extends over the device isolator film. A common contact couples the gate wiring to the second diffusion layer. The gate electrode is comprised of semiconductor material such as polysilicon that is doped with impurities of the same conduction type as the first diffusion layer. The second diffusion layer is coupled only to the common contact."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with common contact coupling gate wiring integrated with gate electrode of antifuse to diffusion layer","description":"An antifuse whose internal written information cannot be analyzed even by utilizing methods to determine whether there is a charge-up in the electrodes. The antifuse includes a gate insulation film, a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8530949","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8530949","citation_suggestion":"Patentable. \"Semiconductor device with common contact coupling gate wiring integrated with gate electrode of antifuse to diffusion layer\" (US-8530949). https://patentable.app/patents/US-8530949","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8530949","json":"https://patentable.app/api/llm-context/US-8530949","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:17:59.722Z"}