{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8530962","patent":{"patent_number":"US-8530962","title":"Transistor of semiconductor device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2010-07-19T00:00:00.000Z","publication_date":"2013-09-10T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":7,"abstract":"Provided are a transistor of a semiconductor device and a method for manufacturing the same. A gate induced drain leakage (GIDL) current is reduced by decreasing a work function at an upper portion of a gate electrode, and a threshold voltage of the transistor is maintained by maintaining a work function at a lower portion of the gate electrode at a high level, thereby reducing a leakage current of the transistor and reducing a read time and a write time of the semiconductor device. The transistor of the semiconductor device includes: a recess with a predetermined depth in a semiconductor substrate; a first gate electrode disposed within the recess; and a second gate electrode disposed on the first gate electrode into which ions of one or more of nitrogen (N), oxygen (O), arsenic (As), aluminum (Al), and hydrogen (H) are doped."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Transistor of semiconductor device and method for manufacturing the same","description":"Provided are a transistor of a semiconductor device and a method for manufacturing the same. A gate induced drain leakage (GIDL) current is reduced by decreasing a work function at an upper portion of","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8530962","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8530962","citation_suggestion":"Patentable. \"Transistor of semiconductor device and method for manufacturing the same\" (US-8530962). https://patentable.app/patents/US-8530962","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8530962","json":"https://patentable.app/api/llm-context/US-8530962","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T10:10:26.173Z"}