{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8530964","patent":{"patent_number":"US-8530964","title":"Semiconductor device including first and second semiconductor elements","assignee":null,"inventors":[],"filing_date":"2011-12-08T00:00:00.000Z","publication_date":"2013-09-10T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":25,"abstract":"A semiconductor device includes a first semiconductor element including a first pn junction between a first terminal and a second terminal. The semiconductor device further includes a semiconductor element including a second pn junction between a third terminal and a fourth terminal. The semiconductor element further includes a semiconductor body including the first semiconductor element and the second semiconductor element monolithically integrated. The first and third terminals are electrically coupled to a first device terminal. The second and fourth terminals are electrically coupled to a second device terminal. A temperature coefficient α1 of a breakdown voltage Vbr1 of the first pn junction and a temperature coefficient α2 of a breakdown voltage Vbr2 of the second pn junction have a same algebraic sign and satisfy 0.6×α1<α2<1.1×α1 at T=300 K, wherein Vbr2