{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8530970","patent":{"patent_number":"US-8530970","title":"Curvilinear wiring structure to reduce areas of high field density in an integrated circuit","assignee":null,"inventors":[],"filing_date":"2009-04-22T00:00:00.000Z","publication_date":"2013-09-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"A method for reducing areas of high field density in an integrated circuit is disclosed. In one embodiment, the method includes forming a first curvilinear wiring structure in a first interconnect layer of an integrated circuit. A second curvilinear wiring structure may be formed in a second interconnect layer of the integrated circuit, such that the first and second curvilinear wiring structures are substantially vertically aligned. The first curvilinear wiring structure may then be electrically connected to the second curvilinear wiring structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Curvilinear wiring structure to reduce areas of high field density in an integrated circuit","description":"A method for reducing areas of high field density in an integrated circuit is disclosed. In one embodiment, the method includes forming a first curvilinear wiring structure in a first interconnect lay","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8530970","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8530970","citation_suggestion":"Patentable. \"Curvilinear wiring structure to reduce areas of high field density in an integrated circuit\" (US-8530970). https://patentable.app/patents/US-8530970","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8530970","json":"https://patentable.app/api/llm-context/US-8530970","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:02:41.901Z"}