{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8530977","patent":{"patent_number":"US-8530977","title":"Apparatus and method for a metal oxide semiconductor field effect transistor with source side punch-through protection implant","assignee":null,"inventors":[],"filing_date":"2003-06-27T00:00:00.000Z","publication_date":"2013-09-10T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":9,"abstract":"A metal oxide semiconductor field effect transistor (MOSFET) with source side punch-through protection implant. Specifically, the MOSFET comprises a semiconductor substrate, a gate stack formed above the semiconductor substrate, source and drain regions, and a protection implant. The semiconductor substrate comprises a first p-type doping concentration. The source and drain regions comprise an n-type doping concentration, and are formed on opposing sides of the gate stack in the semiconductor substrate. The protection implant comprises a second p-type doping concentration, and is formed in the semiconductor substrate under the source region and surrounds the source region in order to protect the source region from the depletion region corresponding to the drain region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Apparatus and method for a metal oxide semiconductor field effect transistor with source side punch-through protection implant","description":"A metal oxide semiconductor field effect transistor (MOSFET) with source side punch-through protection implant. Specifically, the MOSFET comprises a semiconductor substrate, a gate stack formed above ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8530977","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8530977","citation_suggestion":"Patentable. \"Apparatus and method for a metal oxide semiconductor field effect transistor with source side punch-through protection implant\" (US-8530977). https://patentable.app/patents/US-8530977","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8530977","json":"https://patentable.app/api/llm-context/US-8530977","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:01:38.717Z"}