{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8530980","patent":{"patent_number":"US-8530980","title":"Gate stack structure with etch stop layer and manufacturing process thereof","assignee":null,"inventors":[],"filing_date":"2011-04-27T00:00:00.000Z","publication_date":"2013-09-10T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":9,"abstract":"A gate stack structure with an etch stop layer is provided. The gate stack structure is formed over a substrate. A spacer is formed on a sidewall of the gate stack structure. The gate stack structure includes a gate dielectric layer, a barrier layer, a repair layer and the etch stop layer. The gate dielectric layer is formed on the substrate. The barrier layer is formed on the gate dielectric layer. The barrier layer and an inner sidewall of the spacer collectively define a trench. The repair layer is formed on the barrier layer and an inner wall of the trench. The etch stop layer is formed on the repair layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Gate stack structure with etch stop layer and manufacturing process thereof","description":"A gate stack structure with an etch stop layer is provided. The gate stack structure is formed over a substrate. A spacer is formed on a sidewall of the gate stack structure. The gate stack structure ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8530980","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8530980","citation_suggestion":"Patentable. \"Gate stack structure with etch stop layer and manufacturing process thereof\" (US-8530980). https://patentable.app/patents/US-8530980","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8530980","json":"https://patentable.app/api/llm-context/US-8530980","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:46:14.551Z"}