{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8531862","patent":{"patent_number":"US-8531862","title":"Generating and exploiting an asymmetric capacitance hysteresis of ferroelectric MIM capacitors","assignee":null,"inventors":[],"filing_date":"2009-10-24T00:00:00.000Z","publication_date":"2013-09-10T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":12,"abstract":"The present invention relates to an electric component comprising at least one first MIM capacitor having a ferroelectric insulator with a dielectric constant of at least 100 between a first capacitor electrode of a first electrode material and a second capacitor electrode of a second electrode material. The first and second electrode materials are selected such that the first MIM capacitor exhibits, as a function of a DC voltage applicable between the first and second electrodes, an asymmetric capacitance hysteresis that lets the first MIM capacitor, in absence of the DC voltage, assume one of at least two possible distinct capacitance values, in dependence on a polarity of a switching voltage last applied to the capacitor, the switching voltage having an amount larger than a threshold-voltage amount. The invention is applicable for ESD sensors, memories and high-frequency devices."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Generating and exploiting an asymmetric capacitance hysteresis of ferroelectric MIM capacitors","description":"The present invention relates to an electric component comprising at least one first MIM capacitor having a ferroelectric insulator with a dielectric constant of at least 100 between a first capacitor","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8531862","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8531862","citation_suggestion":"Patentable. \"Generating and exploiting an asymmetric capacitance hysteresis of ferroelectric MIM capacitors\" (US-8531862). https://patentable.app/patents/US-8531862","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8531862","json":"https://patentable.app/api/llm-context/US-8531862","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:38:47.425Z"}