{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8531869","patent":{"patent_number":"US-8531869","title":"Nonvolatile memory device and method of writing data to nonvolatile memory device","assignee":null,"inventors":[],"filing_date":"2013-02-22T00:00:00.000Z","publication_date":"2013-09-10T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":11,"abstract":"A resistance variable layer changes: to a second resistance state in such a manner that its resistance value stops decreasing when an interelectrode voltage reaches a negative first voltage; to a first resistance state in such a manner that its resistance value starts increasing when the interelectrode voltage reaches a positive second voltage which is equal in absolute value to the first voltage; to the first resistance state in such a manner that the resistance variable layer flows an interelectrode current such that the interelectrode voltage is maintained at a third voltage higher than the second voltage, when the interelectrode voltage reaches the third voltage; and to the first resistance state in such a manner that its resistance value stops increasing when the interelectrode current reaches a first current in a state where the interelectrode voltage is not lower than the second voltage and lower than the third voltage."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile memory device and method of writing data to nonvolatile memory device","description":"A resistance variable layer changes: to a second resistance state in such a manner that its resistance value stops decreasing when an interelectrode voltage reaches a negative first voltage; to a firs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8531869","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8531869","citation_suggestion":"Patentable. \"Nonvolatile memory device and method of writing data to nonvolatile memory device\" (US-8531869). https://patentable.app/patents/US-8531869","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8531869","json":"https://patentable.app/api/llm-context/US-8531869","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:33:02.229Z"}