{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8531871","patent":{"patent_number":"US-8531871","title":"8-transistor SRAM cell design with Schottky diodes","assignee":null,"inventors":[],"filing_date":"2012-01-06T00:00:00.000Z","publication_date":"2013-09-10T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":20,"abstract":"An 8-transistor SRAM cell which includes two pull-up transistors and two pull-down transistors in cross-coupled inverter configuration to form two inverters for storing a single data bit, wherein each of the inverters includes a Schottky diode; first and second pass gate transistors having a gate terminal coupled to a write word line and a source or drain of each of the pass gate transistors coupled to a write bit line; and first and second read transistors coupled to the two pull-up and two pull-down transistors, one of the read transistors having a gate terminal coupled to a read word line and a source or a drain coupled to a read bit line. In a preferred embodiment, the 8-transistor SRAM cell has column select writing enabled for writing a value to the 8-transistor SRAM cell without inadvertently also writing a value to another 8-transistor SRAM cell."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"8-transistor SRAM cell design with Schottky diodes","description":"An 8-transistor SRAM cell which includes two pull-up transistors and two pull-down transistors in cross-coupled inverter configuration to form two inverters for storing a single data bit, wherein each","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8531871","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8531871","citation_suggestion":"Patentable. \"8-transistor SRAM cell design with Schottky diodes\" (US-8531871). https://patentable.app/patents/US-8531871","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8531871","json":"https://patentable.app/api/llm-context/US-8531871","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:48:00.272Z"}