{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8531901","patent":{"patent_number":"US-8531901","title":"Three dimensional NAND type memory device having selective charge pump activation to minimize noise","assignee":null,"inventors":[],"filing_date":"2011-08-02T00:00:00.000Z","publication_date":"2013-09-10T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":10,"abstract":"A semiconductor memory device comprises a cell array, voltage generation circuits, and a control circuit. The cell array comprises memory cell strings. The voltage generation circuits are arranged below the cell array. Each of the memory cell strings comprises a semiconductor layer, control gates, and memory cell transistors. The semiconductor layer comprises a pair of pillar portions, and a connecting portion. The control gates intersect the pillar portion. The memory cell transistors are formed at intersections of the pillar portion and the control gates. In a write operation and a read operation, the control circuit does not drive voltage generation circuits which give noise to memory cell strings as a write target and a read target, and drives voltage generation circuits which do not give noise to the memory cell strings as the write target and the read target."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three dimensional NAND type memory device having selective charge pump activation to minimize noise","description":"A semiconductor memory device comprises a cell array, voltage generation circuits, and a control circuit. The cell array comprises memory cell strings. The voltage generation circuits are arranged bel","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8531901","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8531901","citation_suggestion":"Patentable. \"Three dimensional NAND type memory device having selective charge pump activation to minimize noise\" (US-8531901). https://patentable.app/patents/US-8531901","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8531901","json":"https://patentable.app/api/llm-context/US-8531901","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:10:01.147Z"}