{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8535544","patent":{"patent_number":"US-8535544","title":"Structure and method to form nanopore","assignee":null,"inventors":[],"filing_date":"2010-07-26T00:00:00.000Z","publication_date":"2013-09-17T00:00:00.000Z","cpc_codes":["G01N"],"num_claims":8,"abstract":"A method of fabricating a material having nanoscale pores is provided. In one embodiment, the method of fabricating a material having nanoscale pores may include providing a single crystal semiconductor. The single crystal semiconductor layer is then patterned to provide an array of exposed portions of the single crystal semiconductor layer having a width that is equal to the minimum lithographic dimension. The array of exposed portion of the single crystal semiconductor layer is then etched using an etch chemistry having a selectivity for a first crystal plane to a second crystal plane of 100% or greater. The etch process forms single or an array of trapezoid shaped pores, each of the trapezoid shaped pores having a base that with a second width that is less than the minimum lithographic dimension."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Structure and method to form nanopore","description":"A method of fabricating a material having nanoscale pores is provided. In one embodiment, the method of fabricating a material having nanoscale pores may include providing a single crystal semiconduct","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8535544","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8535544","citation_suggestion":"Patentable. \"Structure and method to form nanopore\" (US-8535544). https://patentable.app/patents/US-8535544","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8535544","json":"https://patentable.app/api/llm-context/US-8535544","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:55:10.669Z"}