{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8536001","patent":{"patent_number":"US-8536001","title":"Method for forming semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-11-29T00:00:00.000Z","publication_date":"2013-09-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A method for forming a semiconductor device is provided. The exemplary method includes: providing a substrate having a gate structure and first spacers on both sidewalls of the gate structure formed on a top surface of the substrate; forming first openings in the substrate by using the first spacers as a mask, wherein the first openings are located on both sides of the gate structure; forming second openings by etching the first openings with an etching gas, wherein each of the second openings is an expansion of a corresponding one of the first openings toward the gate structure and extends to underneath an adjacent first spacer; and forming epitaxial layers in the first openings and the second openings."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming semiconductor device","description":"A method for forming a semiconductor device is provided. The exemplary method includes: providing a substrate having a gate structure and first spacers on both sidewalls of the gate structure formed o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8536001","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8536001","citation_suggestion":"Patentable. \"Method for forming semiconductor device\" (US-8536001). https://patentable.app/patents/US-8536001","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8536001","json":"https://patentable.app/api/llm-context/US-8536001","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:36:05.246Z"}