{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8536003","patent":{"patent_number":"US-8536003","title":"Method for fabricating semiconductor power device","assignee":null,"inventors":[],"filing_date":"2011-08-17T00:00:00.000Z","publication_date":"2013-09-17T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":11,"abstract":"A method for fabricating a semiconductor power device includes the following steps. First, a substrate having thereon at least a semiconductor layer and a pad layer is provided. Then, at least a trench is etched into the pad layer and the semiconductor layer followed by depositing a dopant source layer in the trench and on the pad layer. A process is carried out thermally driving in dopants of the dopant source layer into the semiconductor layer. A rapid thermal process is performed to mend defects in the dopant source layer and defects between the dopant source layer and the semiconductor layer. Finally, a polishing process is performed to remove the dopant source layer from a surface of the pad layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating semiconductor power device","description":"A method for fabricating a semiconductor power device includes the following steps. First, a substrate having thereon at least a semiconductor layer and a pad layer is provided. Then, at least a trenc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8536003","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8536003","citation_suggestion":"Patentable. \"Method for fabricating semiconductor power device\" (US-8536003). https://patentable.app/patents/US-8536003","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8536003","json":"https://patentable.app/api/llm-context/US-8536003","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:46:38.896Z"}