{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8536026","patent":{"patent_number":"US-8536026","title":"Selective growth method, nitride semiconductor light emitting device and manufacturing method of the same","assignee":null,"inventors":[],"filing_date":"2007-07-03T00:00:00.000Z","publication_date":"2013-09-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"A method for selectively growing a nitride semiconductor, in which a mask is formed, with an opening formed therein, on a nitride semiconductor layer. A nitride semiconductor crystal is selectively grown on a portion of the nitride semiconductor layer exposed through the opening in the mask, the nitride semiconductor crystal shaped as a hexagonal pyramid and having crystal planes inclined with respect to a top surface of the nitride semiconductor. Here, the nitride semiconductor crystal has at least one intermediate stress-relieving area having crystal planes inclined at a greater angle than those of upper and lower areas of the nitride semiconductor crystal, the intermediate stress-relieving area relieving stress which occurs from continuity in the inclined crystal planes."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Selective growth method, nitride semiconductor light emitting device and manufacturing method of the same","description":"A method for selectively growing a nitride semiconductor, in which a mask is formed, with an opening formed therein, on a nitride semiconductor layer. A nitride semiconductor crystal is selectively gr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8536026","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8536026","citation_suggestion":"Patentable. \"Selective growth method, nitride semiconductor light emitting device and manufacturing method of the same\" (US-8536026). https://patentable.app/patents/US-8536026","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8536026","json":"https://patentable.app/api/llm-context/US-8536026","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:39:54.485Z"}