{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8536040","patent":{"patent_number":"US-8536040","title":"Techniques for using material substitution processes to form replacement metal gate electrodes of semiconductor devices with self-aligned contacts","assignee":null,"inventors":[],"filing_date":"2012-04-03T00:00:00.000Z","publication_date":"2013-09-17T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":27,"abstract":"Generally, the present disclosure is directed to techniques for using material substitution processes to form replacement metal gate electrodes, and for forming self-aligned contacts to semiconductor devices made up of the same. One illustrative method disclosed herein includes removing at least a dummy gate electrode to define a gate cavity, forming a work-function material in said gate cavity, forming a semiconductor material above said work-function material, and performing a material substitution process on said semiconductor material to substitute a replacement material for at least a portion of said semiconductor material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Techniques for using material substitution processes to form replacement metal gate electrodes of semiconductor devices with self-aligned contacts","description":"Generally, the present disclosure is directed to techniques for using material substitution processes to form replacement metal gate electrodes, and for forming self-aligned contacts to semiconductor ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8536040","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8536040","citation_suggestion":"Patentable. \"Techniques for using material substitution processes to form replacement metal gate electrodes of semiconductor devices with self-aligned contacts\" (US-8536040). https://patentable.app/patents/US-8536040","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8536040","json":"https://patentable.app/api/llm-context/US-8536040","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:33:51.675Z"}