{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8536061","patent":{"patent_number":"US-8536061","title":"Semiconductor device manufacturing method","assignee":null,"inventors":[],"filing_date":"2011-03-11T00:00:00.000Z","publication_date":"2013-09-17T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":14,"abstract":"According to one embodiment, a semiconductor device manufacturing method includes collectively etching layers of a multilayered film including silicon layers and silicon oxide films alternately stacked on a semiconductor substrate. The etching gas of the etching contains at least two types of group-VII elements and one of a group-III element, a group-IV element, a group-V element, and a group-VI element, the energy of ions entering the semiconductor substrate when performing the etching is not less than 100 eV, and an addition ratio of the group-III element, the group-IV element, the group-V element, the group-VI element, and the group-VII element to the group-VII element is 0.5 (inclusive) to 3.0 (inclusive)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device manufacturing method","description":"According to one embodiment, a semiconductor device manufacturing method includes collectively etching layers of a multilayered film including silicon layers and silicon oxide films alternately stacke","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8536061","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8536061","citation_suggestion":"Patentable. \"Semiconductor device manufacturing method\" (US-8536061). https://patentable.app/patents/US-8536061","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8536061","json":"https://patentable.app/api/llm-context/US-8536061","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:05:33.723Z"}