{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8536571","patent":{"patent_number":"US-8536571","title":"Manufacturing method of semiconductor device","assignee":null,"inventors":[],"filing_date":"2012-01-09T00:00:00.000Z","publication_date":"2013-09-17T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":24,"abstract":"A manufacturing method of a semiconductor device includes the steps of: forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film; performing heat treatment to form a second oxide semiconductor film after the step of forming the first oxide semiconductor film; forming a first conductive film; forming a first resist mask including regions whose thicknesses are different; etching the second oxide semiconductor film and the first conductive film using the first resist mask to form a third oxide semiconductor film and a second conductive film; reducing the size of the first resist mask to form a second resist mask; selectively etching the second conductive film using the second resist mask to remove a part of the second conductive film so that a source electrode and a drain electrode are formed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method of semiconductor device","description":"A manufacturing method of a semiconductor device includes the steps of: forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming an oxide semiconducto","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8536571","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8536571","citation_suggestion":"Patentable. \"Manufacturing method of semiconductor device\" (US-8536571). https://patentable.app/patents/US-8536571","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8536571","json":"https://patentable.app/api/llm-context/US-8536571","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:46:14.810Z"}