{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8536627","patent":{"patent_number":"US-8536627","title":"Carbon implant for workfunction adjustment in replacement gate transistor","assignee":null,"inventors":[],"filing_date":"2012-09-20T00:00:00.000Z","publication_date":"2013-09-17T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A transistor includes a semiconductor body having a channel formed in the semiconductor body; a high dielectric constant gate insulator layer disposed over a surface of an upper portion of the channel; and a gate metal layer disposed over the high dielectric constant gate insulator layer. The channel contains Carbon implanted through the gate metal layer, the high dielectric constant gate insulator layer and the surface to form in the upper portion of the channel a Carbon-implanted region having a substantially uniform concentration of Carbon selected to establish a voltage threshold of the transistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Carbon implant for workfunction adjustment in replacement gate transistor","description":"A transistor includes a semiconductor body having a channel formed in the semiconductor body; a high dielectric constant gate insulator layer disposed over a surface of an upper portion of the channel","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8536627","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8536627","citation_suggestion":"Patentable. \"Carbon implant for workfunction adjustment in replacement gate transistor\" (US-8536627). https://patentable.app/patents/US-8536627","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8536627","json":"https://patentable.app/api/llm-context/US-8536627","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:45:51.407Z"}